Detection device comprising an improved cold finger

ABSTRACT

The detection device comprises a cold finger which performs the thermal connection between a detector and a cooling system. The cold finger comprises at least one side wall at least partially formed by an area made from the amorphous metal alloy. Advantageously, the whole of the cold finger is made from the amorphous metal alloy.

This is a continuation of application Ser. No. 14/335,073 filed Jul. 18,2014, and claims the benefit of French Application No. 1301711 filedJul. 18, 2013. The entire disclosures of the prior applications arehereby incorporated by reference in their entirety.

BACKGROUND OF THE INVENTION

The invention relates to a detection device comprising a cold fingerforming a cooling support of an infrared detector.

State of the Art

In the field of detection devices, there is commonly a photodetectorassociated with a readout circuit. The photodetector delivers a signalrepresentative of the observed scene and this signal is treated by thereadout circuit.

Biasing of the photodetector is obtained by means of a substratepotential imposed on a first terminal of the photodetector and by meansof a reference potential imposed on the second terminal of thephotodetector. The reference potential is imposed by a read device ofcapacitive transimpedance amplifier type.

In order to obtain high detection performances, it is advantageous touse particular substrates, for example made from Mercury, Cadmium,Tellurium and to make this equipment operate at low temperature. The useof a low temperature enables stray electric disturbances to be limitedwhen the optic signal is transformed into an electric signal.

In conventional manner, the detection circuit is thermally associatedwith a cooling device which performs heat removal. However thisarchitecture is difficult to implement and the final performances of thedevice are not satisfactory.

Such a device mainly comprises a hollow part of elongate shape,preferably cylindrical of revolution, which is called “cold finger”. Onthe top part, the cold finger enables thermal connection between thedetection device which is to be cooled and the cooling system, forexample a cryogenerator which enables the detection device to be takento its operating temperature and this temperature to be maintained,while at the same time ensuring maximum thermal insulation between thetop part which is at lower temperature and the bottom part which ishotter.

In conventional manner, it is advantageous to provide a cold fingerwhich presents walls that are as thin as possible. Reduction of thedimensions of the cold finger and in particular of the thickness of thewalls enables the thermal conductance of the cold finger to be reduced.For example, for a finger having a height of 50 mm and an externaldiameter of 6 to 10 mm, the walls have a thickness of about 0.1 mm.

The use of thin walls prevents a too great cooling energy expenditurefrom the cooling system.

The walls also play a role in preventing thermal leakage. The use ofthin walls enables thermal leakage to be reduced by increasing thethermal resistance linked to the walls. The loss of cooling energydelivered by the cooling system to other elements than the detectiondevice is thus minimized. The operating temperature is therefore moreeasily maintained, with a superfluous cooling energy expenditure that isas low as possible. A reduction of the thickness of the walls thereforeenables the efficiency to be improved.

However, it has been observed that if the walls of the cold finger aretoo thin, they are no longer sufficiently rigid to prevent deformationof the cold finger during operation of the latter. This deformation ofthe cold finger results in a considerable loss of the optic performancesof the detection device.

Object of the Invention

It is observed that a requirement exists to provide a detection devicethat presents enhanced thermal performances while at the same timepreserving a simple and robust design. Another of the objects of theinvention is to propose a detection device in which the thermal lossesare reduced to the minimum.

This object tends to be achieved by means of a detection device whichcomprises

-   -   a readout circuit formed in a first semiconductor substrate,    -   a hybridized detection circuit on a first main surface of the        readout circuit,    -   a cooling system thermally connected to the detection circuit        and to the readout circuit,    -   a cold finger configured to enable cooling of the readout        circuit by the cooling system,        and wherein the cold finger comprises at least one side wall        defining a confinement channel of a cooling gas from the cooling        system, said at least one side wall being at least partially        formed by an area made from amorphous metal alloy so as to form        a thermal insulator.

BRIEF DESCRIPTION OF THE DRAWINGS

Other advantages and features will become more clearly apparent from thefollowing description of particular embodiments of the invention givenfor non-restrictive example purposes only and represented in theappended drawings, in which:

FIG. 1 represents, in cross-section, in schematic manner, a detectiondevice comprising a detector coupled to a cooling system,

FIG. 2 represents, in cross-section, in schematic manner, an alternativeembodiment of a detection device equipped with a cryostat.

DESCRIPTION OF PREFERRED EMBODIMENTS

FIG. 1 schematically represents a cold finger 1 of a cooled detectiondevice. Cold finger 1 comprises a hollow part of elongated shape. Coldfinger 1 is preferably cylindrical in shape and in revolution. Coldfinger 1 is designed to connect a detector 2 with a cooling system 3.One end of finger 1 is in contact with the area to be cooled, here thedetector, and the other end is in contact with cooling system 3 which isat a higher temperature. A temperature gradient exists along cold finger1.

This configuration ensures thermal insulation between the top part ofthe cold finger, for example at cryogenic temperature, and the bottompart of the cold finger which is at a higher temperature, for example atambient temperature.

Cold finger 1 comprises at least one side wall which forms the sides ofthe finger. The sides of the cold finger can be broken down into oneside wall or several side walls. Cold finger 1 advantageously comprisesa top which closes cold finger 1, but it can also be envisaged to fixthe side walls of cold finger 1 directly on the cold table or on anotherelement. The top is designed to connect the future detector to the sidewall.

The side walls of cold finger 1 comprise a part formed by an amorphousmetal alloy, i.e. a metallic material which is in “glass” state. Thus,at least one side wall is at least partially formed by an area made fromamorphous metal alloy.

Cold finger 1 is designed to enable cooling of detector 2 by coolingsystem 3 so that cooling system 3 cools detector 2 easily. In aparticular embodiment, cold finger 1 has an interface with detector 2 orwith a cold table which supports detector 2. Cold finger 1 also has aninterface with cooling system 3, for example a cryogenerator.

Cooling system 3 can be a known expansion machine (commonly called“Joule Thomson”) or a known cyclic machine, for example a machine usingthe Stirling cycle.

Cooling system 3 comprises an electromechanical oscillator whichgenerates a pressure wave in an active enclosure containing a fluid. Thefluid is advantageously a gas. The enclosure comprises a part providedwith a mobile regenerator or mover which uses the expansion andcompression cycles to perform a Stirling cycle. The enclosure is formedby the inside of cold finger 1 and expansion enables one end of coldfinger 1 (the top of the cold finger in the figures) to be cooled,thereby cooling detector 2. The cold finger comprises at least one sidewall defining a confinement channel of the cooling fluid from coolingsystem 3.

The fluid used is generally helium or nitrogen under a mean pressure ofseveral hundred kilopascals. The oscillator can be rotary or linear.

It is also possible to use a Joule-Thomson type cooling system.

In general manner, cooling system 3 uses a fluid under pressure which isconfined and which flows inside cold finger 1. The cooling fluid makesthe thermal connection between readout circuit 2 b and cooling system 3.The cold finger enables the cooling fluid to be channelled betweenreadout circuit 2 b and cooling system 3.

For a good resistance of the detection device in time, it is preferablefor cold finger 1 to be impermeable to the fluid used by cooling system3 to avoid increasing the consumption of the coolant in prohibitivemanner and/or to impair the vacuum level inside the cryostat.

The top of cold finger 1 also called cold end is designed to thermallyconnect detector 2 to the rest of cold finger 1. In advantageous manner,the top is made from crystalline material, advantageously fromcrystalline metal, in order to obtain an efficient thermal connectionwith the detector. The top part of the side wall is on the other handformed from amorphous metal to reduce the thermal conductivity as soonas connection is made with detector 2 or with an intermediate element.The top of the cold finger can be made from a material added onto theside walls or in one and the same part with the side wall. Thisconfiguration makes it possible to have a top part presenting a goodthermal conduction with readout circuit 2 b and a thermally insulatingbottom part.

In advantageous manner, the area made from amorphous metal or amorphousmetal alloy forms a ring so as to prevent formation of a heat losschannel between the readout circuit and a hotter area. In a particularlyadvantageous embodiment, the side wall is completely formed fromamorphous alloy which enables the thermal efficiency of the cold fingerto be increased.

In advantageous manner, cold finger 1 also comprises a base part 4 whichpreferably facilitates fixing to cooling system 3. Base part 4 can bemade from an amorphous metal that is identical to or different from thatused for the side walls. It is however possible to use a crystallinematerial to form base part 4. The material forming base part 4 isadvantageously made from a material compatible with the assemblies to beimplemented, for example to enable laser welding, brazing or electricwelding.

Fixing to cooling system 3 can be performed in different manners, forexample by screw-fastening, the tightness being achieved by specificseals.

For example, the side walls of a cold finger 1 have a height comprisedbetween 20 and 40 mm and an external diameter equal to 6 mm, and theyhave a thickness comprised between 0.08 and 0.12 mm.

The use of an amorphous metal enables the thermal resistance to beincreased in comparison with the same metal presented in itsmonocrystalline or polycrystalline form. In this way, a cold finger 1formed at least partially by amorphous metal can have a reduced thermalconductivity compared with a cold finger 1 made from the samemonocrystalline or polycrystalline material. The mechanical resistanceis on the other hand identical between the two cold fingers. Thereduction of heat losses is at least equal to 30% compared with a coldfinger 1 according to the prior art.

The amorphous structure of the material enables energy transportation bythe phonons and electrons to be reduced which has the effect ofincreasing the thermal resistance of cold finger 1. The part made fromamorphous material enables the cold finger to be transformed into athermal insulator.

The use of a material presenting enhanced thermal performances forexample makes it possible to preserve a thickness of side wallconfigured to ensure a good tightness of the cold finger, for examplegood sealing of the vacuum in a cryostat.

In advantageous manner, the amorphous metal alloy is chosen fromstainless steels and more particularly alloys of 304L and 316L grade,titanium-base alloys and more particularly Ta₆V and Ti₂₂V₄Al alloys.

These materials are particularly privileged as they ensure a goodmechanical strength when cold finger 1 is subjected to a gas pressuregreater than or equal to a few tens of bars, while at the same timeproviding the necessary tightness.

In addition to the materials presented above, it is particularlyadvantageous to use a cold finger 1 made from one of the followingmaterials to obtain very good technical performances for operation of aninfrared detector 2 operating at a temperature comprised between 50K and150K.

It is possible to use amorphous Zirconium/Aluminium/Nickel/Copperalloys, in particular alloys in which the Zirconium, Aluminium, Nickeland Copper content represents 99% of the atoms of the alloy. Moreparticularly, it is advantageous to use a Zr₅₅Al₁₀Ni₅Cu₃₀ alloy whichpresents a low thermal conductivity.

It is also advantageous to useZirconium/Titanium/Copper/Nickel/Beryllium alloys, in particular alloysin which the Zirconium, Titanium, Copper, Nickel and Beryllium contentrepresents 99% of the atoms of the alloy. More particularly, it isadvantageous to use a Zr₄₁Ti₁₄Cu₁₂Ni₁₀Be₂₃ alloy which presents a lowthermal conductivity.

It is also advantageous to use Iron/Nickel/Phosphorus/Boron alloys, inparticular alloys in which the Iron, Nickel, Phosphorus and Boroncontent represents 99% of the atoms of the alloy.

It is also advantageous to use Iron/Boron alloys, in particular alloysin which the Iron and Boron content represents 99% of the atoms of thealloy. More particularly, it is advantageous to use a Fe₈₀B₂₀ alloywhich presents a low thermal conductivity.

It is also advantageous to use Iron/Nickel/Chromium/Phosphorus/Boronalloys, in particular alloys in which the Iron, Nickel, Chromium,Phosphorus and Boron content represents 99% of the atoms of the alloy.More particularly, it is advantageous to use one of the alloysFe₄₀Ni₄₀P₁₄B₆ or Fe₃₂Ni₃₆Cr₁₄P₁₂B₆ which present a low thermalconductivity.

It is also advantageous to use Palladium/Nickel/Copper/Phosphorusalloys, in particular alloys in which the Palladium, Nickel, Copper andPhosphorus content represents 99% of the atoms of the alloy. Moreparticularly, it is advantageous to use a Pd₄₀Ni₁₀Cu₃₀P₂₀ alloy whichpresents a low thermal conductivity.

It is also advantageous to use Palladium/Nickel/Phosphorus alloys, inparticular alloys in which the Palladium, Nickel and Phosphorus contentrepresents 99% of the atoms of the alloy. More particularly, it isadvantageous to use a Pd₄₀Ni₄₀P₂₀ alloy which presents a low thermalconductivity.

It is also advantageous to use Cobalt/Nickel/Iron/Silicon/Boron alloys,for example Co₅₈Ni₁₀Fe₅Si₁₁B₁₆.

In advantageous manner, the material forming the side walls of coldfinger 1 is chosen from Zr₅₅Al₁₀Ni₅Cu₃₀, Zr₄₁Ti₁₄Cu₁₂Ni₁₀Be₂₃,Fe₄₀Ni₄₀P₁₄B₆ and Fe₃₂Ni₃₆Cr₁₄P₁₂B₆.

It is further possible to use Iron/Cobalt/Yttrium/Boron alloys possiblycomprising Chromium and/or Carbon, for example Fe₄₂/Co₃₀N₆/B₂₂ orFe₄₃/Co_(4,5)/Cr_(16,5)/Mo_(16,5)/C₁₄/B₄/Y_(1,5) or(Fe₄₃/Cr₅/Co₅/Mo_(12,5)/Mn_(11,2)/C_(15,8)/B_(5,9))_(98,15)/Y_(1,5).

According to the embodiments, the side walls are formed by the samematerial with amorphous regions and crystalline regions. In advantageousmanner, the whole height of the side walls is formed by the amorphousmetal which enables heat losses to be reduced to the maximum.

In a particular embodiment, several different materials are used to formcold finger 1.

Reduction of the heat losses by a solid conduction through cold finger 1enables a detection device to be designed which presents a reducedconsumption of its cooling system 3. It is also possible to design amore compact detection device as the vertical dimensions of cold finger1 can be reduced in order to keep substantially identical heat losses tothose existing for a device according to the prior art.

Detector 2 or the detection device cooled by means of cold finger 1comprises a detection circuit 2 a and a readout circuit 2 b. Readoutcircuit 2 b and detection circuit 1 are electrically connected in such away that readout circuit 2 b processes the electric informationtransmitted by detection circuit 2 a.

Readout circuit 2 b is formed in a first semiconductor substrate anddetection circuit 2 a is hybridized on a first main surface of readoutcircuit 2 b.

Detection circuit 2 a comprises at least one photodetector 2transforming an optic signal into an electric signal. In preferentialmanner, detection circuit 2 a comprises a plurality of photodetectors 2.For example, photodetector 2 is a photodiode, a quantum well or aquantum multiwell device. In a preferred embodiment, photodetector 2performs detection in the infrared field. For example, readout circuit 2b performs polarization of detection circuit 2 a and transformation of acurrent signal transmitted by photodetector 2 into a voltage signal.

In a particular embodiment which can be combined with the previousembodiments, detection circuit 2 a is formed on a first semiconductorsubstrate and readout circuit 2 b is formed on a second semiconductorsubstrate so as to simultaneously obtain good detection characteristicsand good electric performances of readout circuit 2 b. The twosubstrates are formed from different materials. Advantageously, one orboth of the two substrates are monocrystalline. For example, thesubstrate of detection circuit 2 a is made from a material called II-VI,for example HgCdTe and the substrate of readout circuit 2 b is asilicon-based substrate. In advantageous manner, the substrates madefrom II-VI material are cooled in order to provide enhanced detectionperformances. It is also possible to use a material called III-V, forexample InSb or InGaAs.

To obtain a compact system, the two circuits are advantageouslyhybridized and they form the hybridized component. Hybridization of thetwo substrates is advantageously achieved by one or more balls 5 ofelectrically conducting material which are arranged between the twocircuits. Detection circuit 2 a is hybridized on a first main surface ofreadout circuit 2 b so as to form a monoblock assembly and facilitateelectric connection between these two circuits. The first main surfaceof readout circuit 2 b is advantageously formed by a layer ofelectrically insulating material which covers the semiconductorsubstrate and inside which electrically conducting lines are arranged.The second main surface of readout circuit 2 b is for example the rearsurface of the semiconductor substrate.

A cold shield 6 is fixed onto readout circuit 2 b or onto a cold table.Cold shield 6 is fixed so as to surround detection circuit 2 a presenton the first main surface of readout circuit 2 b. Cold shield 6 cancomprise a lens 6 a.

Cold shield 6 is mainly made from a material opaque to the irradiationto be detected in order to form an opaque area. Cold shield 6 comprisesan area transparent to the radiation to be detected, which enables theobservation area of detection circuit 2 a to be defined. The optic axisX of detection circuit 2 a passes through the transparent area. Thetransparent area can be formed by a hole or by an optic device, forexample one or more lenses which are used to delineate the observationarea of the detection device. In this manner, the incident radiationpasses through cold shield 6 before being collected by detection circuit2 a. In the illustrated embodiment, cold shield 6 is placed directly onthe readout circuit, but it is also conceivable to place the cold shieldon the cold table.

In an advantageous embodiment illustrated in FIG. 2, the detectiondevice comprises a Dewar flask 7 or cryostat which incorporates detector2. A vacuum is created in the cryostat to limit the formation ofconvective and conductive currents which disturb operation of detector2. Cold finger 1 is inserted in the cryostat so as to be thermallycoupled to detector 2.

In this configuration, additional mechanical forces are applied to coldfinger 1. The inner part of cold finger 1 is subjected to a pressure ofseveral bars whereas the outer part is placed in a vacuum, for exampleat a pressure of about 10⁻⁵ mbar.

In preferential manner, the volume of this cavity is at asub-atmospheric pressure. In an advantageous embodiment, detectioncircuit 2 a is placed in a vacuum to reduce the thermal conduction ofthis part of the device. The outer part of the cryostat can then be incontact with a hot area whereas cold finger 1 serves the purpose ofcooling detector 2.

In a particularly advantageous embodiment, readout circuit 2 b comprisesone or more connection studs or bumps 8 which are located outside thesurface delineated by cold shield 6. These connection studs 8 enabletransmission of electric signals from readout circuit 2 b to othercircuits of the detection device, for example a processing circuit 9which is configured to process the image sent by readout circuit 2 band/or which is configured to modify the path of a mobile object onwhich the detection device is located.

Connection stud 8 is connected to the rest of readout circuit 2 b bymeans of an electrically conducting wire which runs inside readoutcircuit 2 b. In this manner, it is possible to have a flat surfaceensuring a large mechanical connection between cold shield 6 and readoutcircuit 2 b, a very good opacity to stray radiation and an increasedimpermeability to radiation. This configuration is particularlyadvantageous in the case where detection circuit 2 a is in a controlledatmosphere or in a vacuum as the dependability of the device isincreased. The electric connection between readout circuit 2 b andprocessing circuit 9 is made outside the closed space by means of aconnector. The connectors exit from readout circuit 2 b outside theclosed surface defined by the connection with cold shield 6.

Detection circuit 2 a is designed to be thermally connected to coldsource 3 formed by the cooling system in order to work at a reducedtemperature. In the particular embodiment illustrated in FIGS. 1 and 2,the device comprises a cold table 10 on which readout circuit 2 b isfixed. Cold table 10 acts as mechanical support for the hybridizedcomponent. In advantageous manner, cold table 10 is electricallyconnected to readout circuit 2 b and participates in transit of theelectric signals to processing circuit 9. The second main surface ofreadout circuit 2 b can be fixed directly to cold table 10.

In this configuration, there are successively cold table 10, readoutcircuit 2 b and detection circuit 2 a. Table 10 is designed to bethermally connected to cold source 3 and the cold is imposed on readoutcircuit 2 b and on detection circuit 2 a by means of cold table 10. Inother words, cold table 10 is designed to perform the thermal connectionbetween detection circuit 2 a and cold source 3. Cold shield 6 isadvantageously configured to be at the same temperature as readoutcircuit 2 b and detection circuit 2 a.

When a cryostat is used, an additional electric connection 11 passesthrough the cryostat to connect the detector to processing circuit 9.

1. A detection device comprising: a readout circuit formed in a firstsemiconductor substrate, a detection circuit hybridized on a first mainsurface of the readout circuit, a cooling system thermally connected tothe detection circuit and to the readout circuit, a cold fingerconfigured to enable cooling of the readout circuit by the coolingsystem, wherein the cold finger comprises at least one side walldefining a confinement channel of a cooling gas originating from thecooling system, said at least one side wall being at least partiallyformed by an area made from amorphous metal alloy so as to form athermal insulator.
 2. The detection device according to claim 1, whereinthe area made from amorphous metal alloy forms a ring.
 3. The detectiondevice according to claim 2, wherein the at least one side wall iscompletely formed by an amorphous metal alloy.
 4. The detection deviceaccording to claim 3, wherein the cold finger comprises a top formedfrom crystalline metal and connected to the readout circuit.
 5. Thedetection device according to claim 1, wherein the amorphous metal alloyis chosen from Zirconium/Aluminium/Nickel/Copper alloys,Zirconium/Titanium/Copper/Nickel/Beryllium alloys,Iron/Nickel/Phosphorus/Boron alloys, Iron/Boron alloys,Iron/Nickel/Chromium/Phosphorus/Boron alloys,Palladium/Nickel/Copper/Phosphorus alloys, Palladium/Nickel/Phosphorusalloys, Iron/Cobalt/Yttrium/Boron alloys, andCobalt/Nickel/Iron/Silicon/Boron alloys.
 6. The detection deviceaccording to claim 5, wherein the amorphous metal alloy is chosen fromZr₅₅Al₁₀Ni₅Cu₃₀ alloys, Zr₄₁Ti₁₄Cu₁₂Ni₁₀Be₂₃ alloys, Fe₈₀B₂₀ alloys,Fe₄₀Ni₄₀P₁₄B₆ and Fe₃₂Ni₃₆Cr₁₄P₁₂B₆ alloys, Pd₄₀Ni₁₀Cu₃₀P₂₀ alloys,Pd₄₀Ni₄₀P₂₀ alloys, Fe₄₂/Co₃₀/Y₆/B₂₂ orFe₄₃/Co_(4,5)/Cr_(16,5)/Mo_(16,5)/C₁₄/B₄/Y_(1,5) or(Fe₄₃/Cr₅/Co₅/Mo_(12,5)/Mn_(11,2)/C_(15,8)/B_(5,9))_(98,15)/Y_(1,5)alloys, and Co₅₈N₁₀Fe₅Si₁₁B₁₆ alloys.